* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
* High Input Impedance
* RoHS Compliant Applications
* UPS, PFC, I-H Jar.

* UPS, PFC, I-H Jar, Induction Heater, Home Appliance. General Description Trench insulated gate bipolar transistor.

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction He.

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